材料学院青促会学术交流报告
Prof.Martin Kuball Centerfor Device Thermographyand Reliability University of Bristol U.K.
Title: GaNmicrowave and power electronics - Thermal management, reliability andintegration with diamond
地点：浙江大学玉泉校区曹光彪楼326会议室
时间：2017年07月18日（星期二） 09:00
邀请人：秦发祥
材料学院青年教师发展促进会承办
Abstract： AlGaN/GaN high electron mobility transistors(HEMT) will be the leading devices for microwave and power conversionapplications. Peak RF output power densities of up to 40W/mm, and maximumfrequencies exceeding 300 GHz have been reported, i.e., a spectacular performanceenabling disruptive changes for many systems applications. GaN HEMTpower switching devices offer higher efficiencies than existing state of theart silicon MOSFETs. However, the devices are typically not operated at thesepower levels because it would cause failure after a time; de-rating to 5-10W/mm is therefore typical. To fully realise the potential of this technology,key technological challenges need to be overcome. This in particular includesthe integration of GaNelectronics with diamond. Diamond has the highest thermal conductivity known tomankind, to enable most optimal heat extraction from the devices to avoidexcessive channel temperatures. When properly integrated this will enable GaNelectronics with >x5 power densities to what is presently possible. In thepresentation I will review the challenges to overcome for enabling GaN-on-diamondelectronics, thermally speaking and from a reliability perspective.
BriefBio: Professor Martin Kuball isProfessor in Physics and is Director of the Center forDevice Thermography andReliability (CDTR) at the University of Bristol, U.K. He is Fellow of theInstitute of Physics and of the Institute of Engineering and Technology. He wasawarded in 2015 the Royal Society WolfsonResearch Merit Awardfor this research on GaN-on-Diamondelectronic devices. He holds a PhD from the Max-Planck Institute for SolidState Physics and joined the University of Bristol after being Feodor LynenPostdoctoral Fellow at Brown University, U.S.A. His research focuses on thermaland reliability studies of semiconductor devices, in particular on thedevelopment and application of new measurement methodologies, with a particularfocus on GaNelectronic devices. Professor Kuball’s workhas been disseminated through more than 250 publications, as well as innumerous invited contributions at national and international conferences. Hehas organized various national and international conferences in physics,materials science and engineering, and is member of programme committees ofseveral international conferences (e.g. ROCS & Mantech2017, Palm Springs / USA, ICNS 2017, Strasbourg / France). He leads the GaN-on-diamondelectronics ￡5M EPSRC programme grant GaN-DaME(EP/P00945X) and has numerous other UK, US and Asian funded projects.
欢迎广大老师、学生参加！
